US Patent Issued to TDK on Dec. 2 for "Magnetization rotation element, magnetoresistance effect element, magnetic recording array, high frequency device, and method for manufacturing magnetization rotation element" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,658, issued on Dec. 2, was assigned to TDK Corp. (Tokyo).

"Magnetization rotation element, magnetoresistance effect element, magnetic recording array, high frequency device, and method for manufacturing magnetization rotation element" was invented by Yugo Ishitani (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetization rotation element includes: a spin-orbit torque wiring; a first ferromagnetic layer laminated on the spin-orbit torque wiring; and a low resistance layer laminated on a region that does not overlap the first ferromagnetic layer when viewed in a laminating direction of the spin-orbit torque wiring, the spin-orbit torque wir...