US Patent Issued to TDK on Dec. 16 for "Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,838, issued on Dec. 16, was assigned to TDK Corp. (Tokyo).

"Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory" was invented by Tomoyuki Sasaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A spin current magnetization rotational element according to the present disclosure includes a first ferromagnetic metal layer configured for a direction of magnetization to be changed and a spin-orbit torque wiring extending in a direction intersecting a lamination direction of the first ferromagnetic metal layer and bonded to the first ferromagnetic metal layer. The spin-orbit torque wiring includes a na...