US Patent Issued to TDK on Aug. 5 for "Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. RE50,517, issued on Aug. 5, was assigned to TDK Corp. (Tokyo).

"Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory" was invented by Yohei Shiokawa (Tokyo) and Tomoyuki Sasaki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the wiring extends in a second direction intersecting the first and is bonded to a first surface of the ...