US Patent Issued to TDK on Aug. 26 for "Spin-current magnetization reversal element, magnetoresistance effect element, and magnetic memory" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,697, issued on Aug. 26, was assigned to TDK Corp. (Tokyo).

"Spin-current magnetization reversal element, magnetoresistance effect element, and magnetic memory" was invented by Yohei Shiokawa (Tokyo), Tomoyuki Sasaki (Tokyo), Tomomi Kawano (Tokyo) and Minoru Sanuki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "This spin current magnetization rotational element includes a first ferromagnetic metal layer for a magnetization direction to be changed, and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be...