US Patent Issued to TDK on April 29 for "Magnetoresistance effect element, magnetic recording element, and high-frequency device" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,576, issued on April 29, was assigned to TDK Corp. (Tokyo).

"Magnetoresistance effect element, magnetic recording element, and high-frequency device" was invented by Shinto Ichikawa (Tokyo), Kazuumi Inubushi (Tokyo) and Katsuyuki Nakada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistance effect element having a large MR ratio is provided.This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer h...