US Patent Issued to TDK on April 29 for "Magnetization rotational element, magnetoresistance effect element, semiconductor element, magnetic recording array, and method for manufacturing magnetoresistance effect element" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,290,002, issued on April 29, was assigned to TDK Corp. (Tokyo).

"Magnetization rotational element, magnetoresistance effect element, semiconductor element, magnetic recording array, and method for manufacturing magnetoresistance effect element" was invented by Yugo Ishitani (Tokyo), Tomoyuki Sasaki (Tokyo) and Yohei Shiokawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wirin...