US Patent Issued to TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY on Sept. 23 for "Method for supplementary doping of monocrystalline silicon by lowering a device comprising a containing member provided with first and second through-holes" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,421,619, issued on Sept. 23, was assigned to TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY Co. LTD. (Tianjin, China).

"Method for supplementary doping of monocrystalline silicon by lowering a device comprising a containing member provided with first and second through-holes" was invented by Jiajun Chen (Tianjin, China), Ruolin Wu (Tianjin, China), Yonggang Nie (Tianjin, China) and Libo Cheng (Tianjin, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for supplementary doping of monocrystalline silicon by lowering a device comprising a containing member provided with first and second through-holes are provided. The device includes a hoisting mem...