US Patent Issued to TCL TECHNOLOGY GROUP on Sept. 23 for "Electron barrier film, quantum dot light-emitting diode and preparation method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,498, issued on Sept. 23, was assigned to TCL TECHNOLOGY GROUP Corp. (Huizhou, China).

"Electron barrier film, quantum dot light-emitting diode and preparation method thereof" was invented by Xue Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electron barrier film for a quantum dot light-emitting diode, the electron barrier film includes: a compound with a general formula R1-Si(OR2)3; or a raw material for forming the electron barrier film includes a compound with the general formula R1-Si(OR2)3 one in a group. Not only can a rate of injecting electrons into the luminescent layer be adjusted, so that the number of electron ho...