US Patent Issued to TCL TECHNOLOGY GROUP on Dec. 9 for "Quantum dot light-emitting diode and preparation method therefor" (Chinese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,664, issued on Dec. 9, was assigned to TCL TECHNOLOGY GROUP Corp. (Huizhou, China).

"Quantum dot light-emitting diode and preparation method therefor" was invented by Yiran Yan (Huizhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure involves a quantum dot light-emitting diode and its preparation method, the quantum dot light-emitting diode includes a quantum dot light-emitting layer set between a cathode and an anode, and a hole transport layer between the anode and the quantum dot light-emitting layer, an interface layer is set between the hole transport layer and the quantum dot light-emitting layer. An interface layer is set...