US Patent Issued to TCL TECHNOLOGY GROUP on Dec. 9 for "Quantum dot film, quantum dot light-emitting diode and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,492,339, issued on Dec. 9, was assigned to TCL TECHNOLOGY GROUP Corp. (Huizhou, China).

"Quantum dot film, quantum dot light-emitting diode and preparation method thereof" was invented by Zhiwen Nie (Huizhou, China) and Wenyong Liu (Huizhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A quantum dot film includes: one surface grafted with a first ammonium halide ligand; and another surface opposite to the one surface and grafted with a second ammonium halide ligand. The first ammonium halide ligand has a general structural formula:and the second ammonium halide ligand has a general structural formula:n1less than equal to12, n2less than equal to12...