ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,792, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MEMORY INC. (Hsinchu, Taiwan).

"Memory device and operating method thereof" was invented by Steve S. Chung (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first storage transistor and a first select transistor. The first storage transistor is configured to store a first data bit. The first select transistor is configured to change the resistance of a gate of the first storage transistor, to write the first data bit into the first storage transistor, a first terminal of the first select transistor being coupled to the gate of the first storage tran...