US Patent Issued to Taiwan Semiconductor Manufaturing on Aug. 26 for "Memory devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,327, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufaturing Co. Ltd. (Hsinchu, Taiwan).

"Memory devices and methods of forming the same" was invented by Hung-Li Chiang (Taipei, Taiwan), Jer-Fu Wang (Taipei, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Meng-Fan Chang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a transistor and a memory cell. The transistor includes a gate electrode disposed over a substrate and source/drain regions in the substrate beside the gate electrode. The memory cell is disposed over the transistor and includes a bottom electrode electrically connected to one of the...