US Patent Issued to Taiwan Semiconductor Manufacuturing on Dec. 2 for "Semiconductor device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,469, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacuturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of fabricating the same" was invented by Ken-Ichi Goto (Hsinchu, Taiwan) and Cheng-Yi Wu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, and a first transistor disposed on the substrate. The first transistor includes a first channel layer, a magnesium oxide layer, a first gate electrode, a first gate dielectric and first source/drain electrodes. A crystal orientation of the first channel layer is greater than100less than or greater than110less than. The ma...