US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode" (California Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,479, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode" was invented by Yi Yang (Fremont, Calif.), Dongna Shen (San Jose, Calif.) and Yu-Jen Wang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first conductive layer is patterned and trimmed to form a sub 30 nm conductive via on a first bottom electrode. The conductive via is encapsulated with a first dielectric layer and planarized to expose a top surface of the conductive via. A second conductive layer is deposited over the first dielectri...