US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Semiconductor memory structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,295, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory structure and method for forming the same" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Kuo-Chang Chiang (Hsinchu, Taiwan) and Tsuching Yang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory structure includes a plurality of gate layers and a plurality of insulating layers alternately stacked over a substrate, and at least an active column disposed over the substrate. The gate layers and the insulating layer...