US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Semiconductor device with a vertical channel wrapped around gate, and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,288, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with a vertical channel wrapped around gate, and method for manufacturing the same" was invented by Chieh Lee (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and Chun-Ying Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a transistor that is disposed on a substrate. The transistor includes a gate electrode located over the substrate, a gate dielectric disposed on the gate electrode, a channel layer disposed on the gate dielectric, a first source/drain contact disposed ...