ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,858, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure with conductive bumps" was invented by Hui-Min Huang (Taoyuan, Taiwan), Ming-Da Cheng (Taoyuan, Taiwan), Wei-Hung Lin (Xinfeng Township, Hsinchu County, Taiwan), Chang-Jung Hsueh (Taipei, Taiwan), Kai-Jun Zhan (Taoyuan, Taiwan) and Yung-Sheng Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The first conductive st...