ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,831, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device structure and methods of forming the same" was invented by Wei-Hao Liao (Taichung, Taiwan), Hsi-Wen Tien (Hsinchu, Taiwan), Chih Wei Lu (Hsinchu, Taiwan), Yung-Hsu Wu (Taipei, Taiwan), Cherng-Shiaw Tsai (New Taipei, Taiwan) and Chia-Wei Su (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relates to a method for forming a semiconductor device structure. The method includes including forming one or more conductive features in a first interlayer dielectric (ILD), forming a...