ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,746, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Meng-Hsiu Hsieh (Hsinchu, Taiwan), Hsiao-Wen Chung (Taipei, Taiwan) and Shan-Yu Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device is provided. The method includes generating a redistribution layer (RDL) layout, wherein the RDL layout comprises a plurality of redistribution lines; determining a first dummy region in the RDL layout according to the redistribution lines; disposing a plurality of fir...