US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Semiconductor device and manufacturing methods thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,363, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing methods thereof" was invented by Sheng-Syun Wong (Hsinchu, Taiwan), Shahaji B. More (Hsinchu, Taiwan) and Chih-Yu Ma (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein provide techniques and apparatuses for forming insulator layers in or on a semiconductor substrate prior to forming epitaxial layers within source/drain regions of a fin field-effect transistor. The epitaxial layers may be formed over the insulator layers to reduce electron tunneling between t...