ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,357, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Self-aligned metal gate for multigate device" was invented by Guan-Lin Chen (Hsinchu County, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Jui-Chien Huang (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Self-aligned gate cutting techniques for multigate devices are disclosed herein that provide multigate devices having asymmetric metal gate profiles and asymmetric source/drain feature ...