ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,484, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"RRAM structure" was invented by Hai-Dang Trinh (Hsinchu, Taiwan), Chii-Ming Wu (Taipei, Taiwan), Hsing-Lien Lin (Hsin-Chu, Taiwan) and Fa-Shen Jiang (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode structure disposed over a lower interconnect within a lower inter-level dielectric (ILD) layer over a substrate. The bottom electrode structure has an upper surface including a noble metal. A diffusion barrier layer ...