US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Reducing parasitic capacitance in field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,777, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Reducing parasitic capacitance in field-effect transistors" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor fin protruding from a substrate, an S/D feature disposed over the semiconductor fin, and a first dielectric fin and a second dielectric fin disposed over the substrate, where the semiconductor fin is disposed between the first dielectric fin and the second dielectric fin, wh...