US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Nanostructure FET and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,338, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nanostructure FET and method of forming same" was invented by Yi-Yun Li (Hsinchu, Taiwan), Tsai-Yu Huang (Taoyuan, Taiwan), Li-Ting Wang (Hsinchu, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are provided. A method includes forming a fin structure on a substrate. The fin structure includes a plurality of first nanostructures and a plurality of second nanostructures alternately stacked. A dummy gate is formed along s...