US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,330, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate device including semiconductor fin between dielectric fins and method of fabrication thereof" was invented by Ko-Cheng Liu (Hsinchu, Taiwan), Chang-Miao Liu (Hsinchu, Taiwan) and Huiling Shang (Hsinchu Country, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor fin protruding from a substrate, forming a cladding layer on sidewalls of the semiconductor fin, forming first and second dielectric fins sandwiching the semiconductor fin, and removing the cladding layer. The removal of the cladd...