US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Method of manufacturing a semiconductor device and a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,347, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Hsu Ming Hsiao (Hsinchu, Taiwan), Shen Wang (Hsinchu, Taiwan), Kung Shu Hsu (Hsinchu, Taiwan), Hong Pin Lin (Hsinchu, Taiwan), Shiang-Bau Wang (Pingzchen, Taiwan) and Che-Fu Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a sacrificial gate structure including sacrificial gate electrode is formed over a substrate. A first dielectric layer is formed over the sacrificial gate structu...