US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Method of manufacturing a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,361, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device" was invented by Yi-Sheng Chen (Hsinchu, Taiwan), Kong-Beng Thei (Hsinchu County, Taiwan), Fu-Jier Fan (Hsinchu, Taiwan), Jung-Hui Kao (Hsinchu, Taiwan), Yi-Huan Chen (Hsinchu, Taiwan) and Kau-Chu Lin (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device, including: forming a dielectric layer configured to be a gate oxide contacting the second well on the substrate, wherein the dielectric layer is single-layered dielectric layer and incl...