ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,778, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for reducing line end spacing and semiconductor devices manufactured thereof" was invented by Yi-Nien Su (Hsinchu, Taiwan) and Yu-Yu Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide methods for forming conductive lines with dielectric cut features. Particularly, embodiments of present disclosure provide a method for forming conductive line pattern using two patterning processes. A line pattern is formed in the first patterning process. A cut pattern is formed over the li...