ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,353, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method for forming semiconductor structure" was invented by Chung-Ting Ko (Kaohsiung, Taiwan), Wen-Ju Chen (New Taipei, Taiwan) and Tai-Chun Huang (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming a first active region and a second active region, etching the first active region and the second active region to form a first recess and a second recess, respectively, forming the first dielectric layer over the first active region and the second ...