US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,380, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layer" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Hsin Fu Lin (Hsinchu, Taiwan) and Chien Hung Liu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a substrate. The substrate includes a metal layer, a device layer disposed over the me...