US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Metal gate stacks and methods of fabricating the same in multi-gate field-effect transistors" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,365, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal gate stacks and methods of fabricating the same in multi-gate field-effect transistors" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a semiconductor fin protruding from the substrate, where the semiconductor fin includes semiconductor layers stacked in a vertical direction, a gate stack engaging with channel regions of the semiconductor fin, and source/drain (S/D) features disposed adjacent to the gate stack in S/D regions of the semi...