US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Magnetic random access memory and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,477, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetic random access memory and manufacturing method thereof" was invented by Chih-Hsin Yang (Hsinchu, Taiwan), Dian-Hau Chen (Hsinchu, Taiwan), Yen-Ming Chen (Chu-Pei, Taiwan), Yu-Jen Wang (Hsinchu, Taiwan) and Chen-Chiu Huang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device including a magnetic random access memory (MRAM) cell, a first layer made of a conductive material is formed over a substrate. A second layer for a magnetic tunnel junction (MTJ) stack is formed over t...