US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Isolation structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,775, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structures in semiconductor devices" was invented by Fu-Ting Yen (Hsinchu, Taiwan), Wei-Ting Yeh (Hsinchu, Taiwan), Shih-Cheng Chen (New Taipei, Taiwan) and Yu-Yun Peng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with isolation structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate forming a superlattice structure with first and second nanostructured layers on the fin structure, forming a source/drain (S/D) opening in the superl...