US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Isolation for multigate devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,331, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Isolation for multigate devices" was invented by Ko-Cheng Liu (Hsinchu, Taiwan), Chang-Miao Liu (Hsinchu, Taiwan) and Ming-Lung Cheng (Kaohsiung County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary device includes a stack of channel layers over a substrate extension, a gate, and an insulation layer. The stack of channel layers extends between a first epitaxial source/drain and a second epitaxial source/drain. The gate surrounds each channel layer of the stack of the channel layers. The insulation layer is over the substra...