US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Implantations for forming source/drain regions of different transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,281, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Implantations for forming source/drain regions of different transistors" was invented by Dian-Sheg Yu (Hsinchu, Taiwan), Ren-Fen Tsui (Taipei, Taiwan) and Jhon Jhy Liaw (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first transistor including forming a first gate stack, epitaxially growing a first source/drain region on a side of the first gate stack, and performing a first implantation to implant the first source/drain region. The method further includes forming a second transistor including ...