US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Hybrid micro-bump integration with redistribution layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,857, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Hybrid micro-bump integration with redistribution layer" was invented by Ting-Li Yang (Tainan, Taiwan), Po-Hao Tsai (Zhongli, Taiwan), Yi-Wen Wu (Xizhi, Taiwan), Sheng-Pin Yang (Kaohsiung, Taiwan) and Hao-Chun Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; an interconnect structure over the substrate; a first passivation layer over the interconnect structure; a first conductive pad, a second conductive pad, and a conductive line disposed over the first passivation layer and electri...