US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Gate structure and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,356, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structure and method of forming same" was invented by Shahaji B. More (Hsinchu, Taiwan), Chandrashekhar Prakash Savant (Hsinchu, Taiwan) and Chun Hsiung Tsai (Xinpu Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are provided. A method includes forming a sacrificial gate over an active region of a substrate. The sacrificial gate is removed to form an opening. A gate dielectric layer is formed on sidewalls and a bottom of the opening. A first work function layer is formed...