US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Forming low-resistance capping layer over metal gate electrode" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,329, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Forming low-resistance capping layer over metal gate electrode" was invented by Chia-Wei Chen (Hsinchu, Taiwan), Wei Cheng Hsu (Hsinchu, Taiwan), Hui-Chi Chen (Hsinchu County, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan), Kuo-Feng Yu (Hsinchu County, Taiwan), Shih-Hang Chiu (Taichung, Taiwan), Wei-Cheng Wang (Hsinchu, Taiwan), Yen-Ju Chen (Hsinchu, Taiwan) and Chun-Chih Cheng (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes stacks of nano-structures that each extend in a first horizontal dire...