US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,362, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate" was invented by Li-Zhen Yu (New Taipei, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of stacks that each includes a plurality of nanostructures stacked over each other, a gate structure wrapping around the nanostructures and extending between the stacks, source and drain structures, an...