US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Fin field-effect transistor device with composite liner for the fin" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,320, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor device with composite liner for the fin" was invented by Wan-Yi Kao (Baoshan Township, Taiwan) and Chung-Chi Ko (Nantou, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a liner over the fin; performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, the conversion layer comprising an oxide or a nitride of the liner; forming isolation regions on oppos...