US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 9 for "Deep trench structure for a capacitive device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,314, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Deep trench structure for a capacitive device" was invented by En-Shuo Lin (Hsinchu, Taiwan), Sheng Ko (Hsinchu, Taiwan), Chi-Fu Lin (Hsinchu County, Taiwan), Che-Yi Lin (Hsinchu, Taiwan) and Clark Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop laye...