US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 9 for "Contact profile optimization for IC device performance improvement" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,321, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Contact profile optimization for IC device performance improvement" was invented by Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active region that extends in a first horizontal direction. A source/drain component is disposed over the active region. A source/drain contact is disposed over the source/drain component. A gate structure is disposed over the active region. The gate structure extends in a sec...