US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "Transistor including a hydrogen-diffusion barrier and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,971, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor including a hydrogen-diffusion barrier and methods for forming the same" was invented by Min-Kun Dai (Hsinchu, Taiwan), Wei-Gang Chiu (New Taipei, Taiwan), I-Cheng Chang (Hsinchu, Taiwan), Cheng-Yi Wu (Taichung, Taiwan), Han-Ting Tsai (Kaoshiung, Taiwan), Tsann Lin (Hsinchu, Taiwan) and Chung-Te Lin (Taiwan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comp...