ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,986, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Spacer structures for semiconductor devices" was invented by Cheng-Yi Peng (Taipei, Taiwan) and Song-Bor Lee (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with inner spacer structures between source/drain (S/D) regions and gate-all-around structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a stack of nanostructured layers with first and second nanostructured regions disposed on the substrate and first and second sour...