US Patent Issued to Taiwan Semiconductor Manufacturing on Sept. 30 for "Source/drain structure for semiconductor fin field effect transistor (finFET) device having graded germanium" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,010, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drain structure for semiconductor fin field effect transistor (finFET) device having graded germanium" was invented by Shahaji B. More (Hsinchu, Taiwan) and Cheng-Han Lee (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, and a source/drain (S/D) region adjacent to the gate structure. The S/D region can include first and second side surfaces ...