US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Source/drain metal contact and formation thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,994, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Source/drain metal contact and formation thereof" was invented by Shih-Chuan Chiu (Hsinchu, Taiwan), Tien-Lu Lin (Hsinchu, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu, Taiwan) and Jia-Chuan You (Taoyuan County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the se...