US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Source and drain structure with reduced contact resistance and enhanced mobility" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,955, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Source and drain structure with reduced contact resistance and enhanced mobility" was invented by Chih-Teng Liao (Hsinchu, Taiwan), Chih-Shan Chen (New Taipei, Taiwan), Yi-Wei Chiu (Kaohsiung, Taiwan), Chih Hsuan Cheng (Miaoli County, Taiwan) and Tzu-Chan Weng (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second fin active regions extruding from a substrate, where the first and second fin active regions are separated by an isolation feature. The semiconductor includes a first gate sta...