ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,954, issued on Sept. 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure with fin and method for forming the same" was invented by Zhiqiang Wu (Zhubei, Taiwan), Kuo-An Liu (Hsinchu, Taiwan), Kai Tak Lam (Hsinchu, Taiwan), Meng-Yu Lin (New Taipei, Taiwan), Chun-Fu Cheng (Zhubei, Taiwan), Chieh-Chun Chiang (Taipei, Taiwan) and Chun-Hsiang Fan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a fin, and a semiconductor layer. The fin is over the substrate, the semicon...