US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Semiconductor device having metallization layer with low capacitance and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,386, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having metallization layer with low capacitance and method for manufacturing the same" was invented by Cheng-Chin Lee (Hsinchu, Taiwan), Ting-Ya Lo (Hsinchu, Taiwan), Chi-Lin Teng (Hsinchu, Taiwan), Cherng-Shiaw Tsai (Hsinchu, Taiwan), Shao-Kuan Lee (Hsinchu, Taiwan), Kuang-Wei Yang (Hsinchu, Taiwan), Gary Liu (Hsinchu, Taiwan), Hsin-Yen Huang (Hsinchu, Taiwan), Hsiao-Kang Chang (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor d...