US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 30 for "Post gate dielectric processing for semiconductor device fabrication" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,011, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Post gate dielectric processing for semiconductor device fabrication" was invented by Chih-Yu Hsu (Hsinchu County, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan), Chia-Wei Chen (Hsinchu, Taiwan), Shan-Mei Liao (Hsinchu, Taiwan), Hui-Chi Chen (Hsinchu County, Taiwan), Cheng Hong Yang (Hsinchu, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Kuo-Feng Yu (Hsinchu County, Taiwan), Feng-Cheng Yang (Hsinchu, Taiwan) and Yen-Ming Chen (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof...